The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic AnnealingLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3344-3348, issn 0361-5235, 5 p.Conference Paper

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate SubstratesBENSON, J. D; BUBULAC, L. O; BRILL, G et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3217-3223, issn 0361-5235, 7 p.Conference Paper

Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic EllipsometryLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2965-2970, issn 0361-5235, 6 p.Conference Paper

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/ Si(211) by Scanning Transmission Electron MicroscopyJACOBS, R. N; STOLTZ, A. J; SALMON, M et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3148-3155, issn 0361-5235, 8 p.Conference Paper

Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE Hg_1―xCd_xTeBROWN, A. E; JAIME-VASQUEZ, M; ALMEIDA, L. A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3224-3230, issn 0361-5235, 7 p.Conference Paper